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Huawei P10 Flash Memory Gate

From Consumer Rights Wiki

The launch of Huawei's flagship P10 devices in 2017 turned into a massive scandal when consumers discovered a massive performance discrepancy in memory read and write speeds. Huawei had silently mixed three vastly different generations of flash memory (eMMC 5.1, UFS 2.0, and UFS 2.1) across otherwise identical units. This resulted in a performance disparity of up to 200%, resulting in customers receiving budget performance for flagship prices[1][2][3]. Huawei initially brushed off the benchmark data as a smear campaign run by a competitor but was later forced into making a public apology. Although they had apologized about their initial response, they never offered any recall or compensation for affected consumers[3].

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References

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  1. "Huawei P10 Encounters 'Memory Gate' (华为P10遭遇"闪存门")". Jieman News (界面新闻). 2017-04-17. Retrieved 2016-07-17.
  2. "Bullying Customers? What are the Underlying Issues Behind Huawei P10 'Memory Gate'? (店大欺客? 华为P10 "闪存门" 背后有哪些问题?| 揭秘)". Leiphone (雷锋网). 2017-04-19. Retrieved 2026-07-17.{{cite web}}: CS1 maint: url-status (link)
  3. 3.0 3.1 "The "Memory Gate" Storm Continues: Can Huawei's Q1 Shipping Data Uplift Morale? ("闪存门"风波未息,华为手机公布出货量数据能"冲喜"吗)". Jiemian News (界面新闻). 2017-05-04. Retrieved 2026-07-17.{{cite web}}: CS1 maint: url-status (link)


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