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Huawei P10 Flash Memory Gate

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The launch of Huawei's flagship P10 devices in 2017 turned into a massive scandal when consumers discovered a massive performance discrepancy in memory read and write speeds. Huawei had silently mixed three vastly different generations of flash memory (eMMC 5.1, UFS 2.0, and UFS 2.1) across otherwise identical units. This resulted in a performance disparity of up to 200%, resulting in customers receiving budget performance for flagship prices.[1][2][3] Huawei initially brushed off the benchmark data as a smear campaign run by a competitor but was later forced into making a public apology. Although they had apologized about their initial response, they never offered any recall or compensation for affected consumers.[3]

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Flash memory scandal

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Huawei's response

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Consumer response

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References

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  1. ↑ 饶文怡 (17 Apr 2017). "华为P10遭遇"闪存门"" [Huawei P10 Hit by "Flash Memory Gate" Scandal]. Jiemian News (in 中文). Archived from the original on 29 Jul 2026. Retrieved 7 Aug 2026.
  2. ↑ 铁流 (19 Apr 2017). "店大欺客？ 华为P10 "闪存门" 背后有哪些问题？" ["Bullying Customers? What are the Underlying Issues Behind Huawei P10 “Memory Gate”?]. Leiphone (in 中文). Archived from the original on 8 Aug 2026. Retrieved 7 Aug 2026.
  3. ↑ 3.0 3.1 互联网随笔 (4 May 2017). ""闪存门"风波未息，华为手机公布出货量数据能"冲喜"吗" [The “Memory Gate” Storm Continues: Can Huawei's Q1 Shipping Data Uplift Morale?]. Jiemian News. Archived from the original on 8 Aug 2026. Retrieved 7 Aug 2026.


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